bipolarvoltage
igbt (insulated gate bipolar transistor)全称"绝缘栅双极型晶体管"
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igbt是insulated gate bipolar transistor的缩写,即绝缘栅双极晶体管
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igbt (insulated gate bipolar transistor) 全称"绝缘栅双极型晶体管
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百度百科:igbt(insulated gate bipolar transistor),绝缘栅双极型
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bipolar transistor(extra high voltage series)
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new bipolar high-voltage power supply
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igbt(insulated gate bipolar transistor)学名叫做绝缘栅双极型晶体
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igbt(insulated gate bipolar transistor),即绝缘栅双极型晶体管.
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18 micron bcd (bipolar-cmos-dmos) 100v high voltage process.
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刘松琴韩剑宇analchem电化学发光分析单细胞中多个甘氨酸
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1984年sgs的工程师成功将bipolar/cmos/dmos/diodes通过硅栅集成在一
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64bit bipolar ram 35ns 20-clcc - am3101-1lcb
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igbt(insulatedgatebipolartransistor),绝缘栅双极型晶体管,是由bjt
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method of making high-voltage bipolar/cmos/dmos (bcd) devices
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using the pxi-4110 power supply to create a bipolar voltage
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power bipolar
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igbt(insulated gate bipolar transistor),绝缘栅双极型晶体管,igbt
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high-voltage complementary bipolar and bicmos technology using
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高功率微波武器现状与趋势
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up to 1100 v, which is available as unipolar or bipolar voltage
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