gate oxide
![creation of multiple gate oxide with high thickness ratio in](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=1409857809,499013924&fm=253&fmt=auto&app=138&f=JPG?w=340&h=499)
creation of multiple gate oxide with high thickness ratio in
图片尺寸2320x3408![gate formation (i) sac oxide remove gate1 oxide dep](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=4200298558,2167107368&fm=253&fmt=auto&app=138&f=JPEG?w=667&h=500)
gate formation (i) sac oxide remove gate1 oxide dep
图片尺寸1080x810![statistical theoretical analysis method of tddb of gate oxide](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=1428220631,2831696653&fm=253&fmt=auto&app=138&f=JPEG?w=500&h=714)
statistical theoretical analysis method of tddb of gate oxide
图片尺寸1890x2698![可靠性系列gateoxidedegradation](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=2122409836,3147564090&fm=253&fmt=auto&app=138&f=JPEG?w=500&h=217)
可靠性系列gateoxidedegradation
图片尺寸1440x624![03 gate oxide degradation](https://i.ecywang.com/upload/1/img1.baidu.com/it/u=3589646616,1172604830&fm=253&fmt=auto&app=138&f=JPEG?w=722&h=303)
03 gate oxide degradation
图片尺寸722x303![dual gate oxide structure in semiconductor device and method](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=3463069926,1319775175&fm=253&fmt=auto&app=120&f=JPG?w=353&h=500)
dual gate oxide structure in semiconductor device and method
图片尺寸1725x2441![statistical theoretical analysis method of tddb of gate oxide](https://i.ecywang.com/upload/1/img1.baidu.com/it/u=3680449971,1462454558&fm=253&fmt=auto&app=138&f=JPEG?w=714&h=500)
statistical theoretical analysis method of tddb of gate oxide
图片尺寸1890x1323![gate oxide short defect model in finfets](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=3634635736,895495387&fm=253&fmt=auto&app=138&f=GIF?w=266&h=312)
gate oxide short defect model in finfets
图片尺寸266x312![system and method for testing gate oxide of an amplifier](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=587646970,2667735989&fm=253&fmt=auto&app=138&f=JPG?w=500&h=792)
system and method for testing gate oxide of an amplifier
图片尺寸1658x2626![03 gate oxide degradation](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=3773812068,3214730608&fm=253&fmt=auto&app=138&f=JPEG?w=566&h=458)
03 gate oxide degradation
图片尺寸566x458![method of fabricating a dual gate oxide](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=3322344562,1372897630&fm=253&fmt=auto&app=138&f=JPG?w=1185&h=500)
method of fabricating a dual gate oxide
图片尺寸1521x642![trench semiconductor device having gate oxide layer with](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=1316438400,2559054220&fm=253&fmt=auto&app=138&f=JPG?w=500&h=772)
trench semiconductor device having gate oxide layer with
图片尺寸2053x3170![high-density plasma multilayer gate oxide](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=2463243683,2598248665&fm=253&fmt=auto&app=138&f=JPG?w=500&h=655)
high-density plasma multilayer gate oxide
图片尺寸2053x2690![method of simulation for gate oxide integrity check on an entire](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=1194822979,2028111762&fm=253&fmt=auto&app=138&f=JPG?w=500&h=760)
method of simulation for gate oxide integrity check on an entire
图片尺寸2701x4108![thermal dual gate oxide device integration](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=2453371452,3770325786&fm=253&fmt=auto&app=138&f=JPG?w=405&h=500)
thermal dual gate oxide device integration
图片尺寸2092x2581![method of forming a low voltage gate oxide layer and tunnel](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=2281452559,1522423742&fm=253&fmt=auto&app=138&f=JPG?w=500&h=514)
method of forming a low voltage gate oxide layer and tunnel
图片尺寸2035x2092![method of forming nitrogen implanted ultrathin gate oxide for](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=3693319611,2607720931&fm=253&fmt=auto&app=138&f=JPEG?w=500&h=777)
method of forming nitrogen implanted ultrathin gate oxide for
图片尺寸2437x3789![method for determining transistor gate oxide thickness](https://i.ecywang.com/upload/1/img1.baidu.com/it/u=58032481,574207462&fm=253&fmt=auto&app=138&f=JPG?w=500&h=508)
method for determining transistor gate oxide thickness
图片尺寸2566x2608![use of oxide surface to facilitate gate break on a carrier](https://i.ecywang.com/upload/1/img2.baidu.com/it/u=2756239165,3460995560&fm=253&fmt=auto&app=138&f=JPG?w=456&h=500)
use of oxide surface to facilitate gate break on a carrier
图片尺寸2342x2569![专利us6753229 - multiple-thickness gate oxide formed by oxygen](https://i.ecywang.com/upload/1/img0.baidu.com/it/u=3687385738,1790840595&fm=253&fmt=auto&app=138&f=JPG?w=500&h=818)
专利us6753229 - multiple-thickness gate oxide formed by oxygen
图片尺寸2290x3747